Enhancement of Schottky barrier height to [ital n]-GaAs using NiAl, NiAl/Al/Ni, and Ni/Al/Ni layer structures

Journal Article · Fri Jul 01 04:00:00 EDT 1994 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)

DOI:https://doi.org/10.1116/1.578982· OSTI ID:6664769

Chen, C; Chang, Y A ^[1]; Kuech, T F ^[2]

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1. University of Wisconsin-Madison, Materials Science and Engineering Department, Madison, Wisconsin 53706 (United States)
2. University of Wisconsin-Madison, Chemical Engineering Department, Madison, Wisconsin 53706 (United States)

The Schottky barrier height of NiAl/[ital n]-GaAs, NiAl/Al/Ni/[ital n]-GaAs, and Ni/Al/Ni/[ital n]-GaAs diodes has been studied by the current--voltage ([ital I]--[ital V]) and the capacitance--voltage ([ital C]--[ital V]) techniques. A NiAl alloy with 50 at. % Al was sputter deposited. An overall concentration of 50 at. % Al in NiAl/Al/Ni/[ital n]-GaAs contact structure, and two different overall concentrations of 25 and 60 at. % Al in Ni/Al/Ni/[ital n]-GaAs contact structure were prepared by sputter depositing different thicknesses of Ni and Al. An enhancement of the Schottky barrier height ranging from 0.1 to 0.13 eV was observed for each of the above contacts. The maximum barrier heights range from 0.95 to 0.98 eV for both the alloy and layered structure contacts, with ideality factors smaller than or equal to 1.1. The interfacial stability between the contacts and GaAs has been examined by cross-sectional transmission electron microscopy, glancing angle x-ray diffraction, and scanning Auger microscopy. A planar interface between contacts and GaAs was observed for both the alloy and layered contacts. A regrowth mechanism has been demonstrated to explain the enhancement of Schottky barrier height for these contacts.

• OSTI ID: 6664769
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) Vol. 12:4; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ALLOY SYSTEMS
ALLOYS
ALUMINIUM
ALUMINIUM ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
BINARY ALLOY SYSTEMS
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MATERIALS
METALS
N-TYPE CONDUCTORS
NICKEL
NICKEL ALLOYS
PNICTIDES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
STABILITY
TRANSITION ELEMENTS