High Schottky barrier height of the Al/{ital n}-GaAs diodes achieved by sputter deposition

Journal Article · Mon Mar 14 04:00:00 EST 1994 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.111900· OSTI ID:144767

Chen, C; Chang, Y A ^[1]; Huang, J; Kuech, T F ^[2]

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1. University of Wisconsin-Madison, Materials Science and Engineering Department, 1509 University Avenue, Madison, Wisconsin 53706 (United States)
2. University of Wisconsin-Madison, Chemical Engineering Department, 1415 Johnson Drive, Madison, Wisconsin 53706 (United States)

Thermally stable Al/{ital n}-GaAs Schottky contacts, up to annealing temperature at 500 {degree}C for 20 s, have been realized by sputter deposition. The Schottky barrier height was 0.75 eV (0.9 eV) when using the current-voltage ({ital I}-{ital V}) [capacitance-voltage ({ital C}-{ital V})] method with an ideality factor of 1.09 for the as-deposited samples. The Schottky barrier height increased to 0.97 eV (1.06 eV) with an ideality factor of 1.07 after annealing at 400 {degree}C for 20 s. The discrepancy between {ital I}-{ital V} and {ital C}-{ital V} measurements was attributed to deep levels existing in the GaAs substrate. A (200) dark-field cross-section transmission electron microscopy image of the contact after annealing at 600 {degree}C showed that the (Ga,Al)As phase formed at the interface and the enhancement of the Schottky barrier height was due to the formation of this phase.

• DOE Contract Number: FG02-86ER45274
• OSTI ID: 144767
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 64; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ANNEALING
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
INTERFACES
N-TYPE CONDUCTORS
SCHOTTKY BARRIER DIODES
STABILITY