Schottky enhancement of reacted NiAl/[ital n]-GaAs contacts

Journal Article · Mon Jun 20 04:00:00 EDT 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.111248· OSTI ID:7044983

Chen, C; Chang, Y A ^[1]; Kuech, T F ^[2]

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1. Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, Wisconsin 53706 (United States)
2. Department of Chemical Engineering, University of Wisconsin-Madison, 1415 Johnson Drive, Madison, Wisconsin 53706 (United States)

Schottky enhancement of reacted NiAl/[ital n]-GaAs contacts was demonstrated experimentally. The Schottky barrier height increases from 0.83 eV for the [ital as]-deposited contacts to 0.96 eV when the contacts were annealed at 400 [degree]C for 1 min. Formation of a high Al content (Al,Ga)As layer at the interface upon annealing was rationalized in terms of a thermodynamic/kinetic model. A (200) dark field cross-sectional transmission electron microscopy image was used to show the presence of high Al content (Al,Ga)As at the interface.

• DOE Contract Number: FG02-86ER45274
• OSTI ID: 7044983
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 64:25; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360606* -- Other Materials-- Physical Properties-- (1992-)
ALLOY SYSTEMS
ALLOYS
ALUMINIUM ALLOYS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BINARY ALLOY SYSTEMS
CHEMICAL REACTIONS
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INTERFACES
MATERIALS
MICROSCOPY
N-TYPE CONDUCTORS
NICKEL ALLOYS
PHYSICAL PROPERTIES
PNICTIDES
POTENTIALS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SURFACE POTENTIAL