Schottky barrier heights of Ni, Pt, Pd, and Au on n-type GaN
Book
·
OSTI ID:395039
- Univ. of Illinois, Urbana, IL (United States)
- APA Optics, Inc., Blaine, MN (United States)
Schottky barrier heights of Ni, Pt, Pd, and Au on n-type GaN were measured using current-voltage and capacitance-voltage techniques. Measurements from the I-V technique yielded barrier heights of 0.95, 1.01, 0.94, and 0.87 eV for Ni, Pt, Pd, and Au, respectively. Barrier heights of 1.13, 1.16, 1.07, and 0.98 eV, for Ni, Pt, Pd, and Au, respectively, were obtained using C-V measurements.
- OSTI ID:
- 395039
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
42 ENGINEERING
CAPACITANCE
COMPOSITE MATERIALS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EVAPORATION
EXPERIMENTAL DATA
FABRICATION
GALLIUM NITRIDES
GOLD
HALL EFFECT
INTERFACES
LIGHT EMITTING DIODES
MOBILITY
NICKEL
PALLADIUM
PLATINUM
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
TRANSISTORS
42 ENGINEERING
CAPACITANCE
COMPOSITE MATERIALS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EVAPORATION
EXPERIMENTAL DATA
FABRICATION
GALLIUM NITRIDES
GOLD
HALL EFFECT
INTERFACES
LIGHT EMITTING DIODES
MOBILITY
NICKEL
PALLADIUM
PLATINUM
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
TRANSISTORS