Schottky barriers on p-GaN

Book · Thu Oct 31 23:00:00 EST 1996

OSTI ID:395040

Kuznetsov, N I; Kalinina, E V; Soloviev, V A ^[1]; Dmitriev, V A ^[2]

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1. A.F. Ioffe Inst., St. Petersburg (Russian Federation)
2. Cree Research, Inc., Durham, NC (United States)

Schottky barriers were formed on p-GaN. p-GaN layers doped with Mg were grown by metalorganic chemical vapor deposition (MOCVD). 6H-SiC wafers were used as substrates. The barriers were made by vacuum thermal evaporation of Au. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the barriers were investigated. The concentration of the ionized acceptors in the p-layers was measured to be about {approximately} 10{sup 17} cm{sup {minus}3}. The barrier height was determined to be 2.48 eV by C-V measurements at room temperature. The forward current flow mechanism through the barriers is discussed.

• OSTI ID: 395040
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
CHEMICAL VAPOR DEPOSITION
COMPOSITE MATERIALS
DOPED MATERIALS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
EVAPORATION
EXPERIMENTAL DATA
FABRICATION
GALLIUM NITRIDES
GOLD
MAGNESIUM
PALLADIUM
SCHOTTKY BARRIER DIODES
SILICON
SILICON CARBIDES
TEMPERATURE DEPENDENCE