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Title: The measurement and analysis of epitaxial recrystallization kinetics in ion-beam-amorphized SrTiO[sub 3]

Journal Article · · Journal of Materials Research; (United States)
;  [1];  [2]
  1. Division of Engineering, Brown University, Providence, Rhode Island 02912 (United States)
  2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6056 (United States)

The solid-state epitaxial-regrowth kinetics of ion-beam amorphized SrTiO[sub 3] surfaces annealed in water-vapor-rich atmospheres have been studied using time-resolved reflectivity (TRR). For this material, the conversion of the reflectivity-versus-time data obtained from the TRR measurements to recrystallized depth-versus-time data is more complicated than in systems such as silicon, where the reflectivity can be fit by assuming that the refractive index [ital N] ([ital N]=[ital n]+i[ital k]) in the amorphous layer is constant. In SrTiO[sub 3], agreement between measurements made directly with Rutherford backscattering spectroscopy (RBS) and those made using TRR can be obtained only when [ital N] is permitted to vary within the amorphous layer, with non-zero values for both the real and imaginary components. In some cases, the roughness of the amorphous/crystalline interface must also be considered. Additionally, a model for H[sub 2]O-enhanced epitaxial regrowth is presented which is in good agreement with the shape of the depth-versus-time profiles that are obtained from the TRR data.

DOE Contract Number:
AC05-84OR21400
OSTI ID:
6663546
Journal Information:
Journal of Materials Research; (United States), Vol. 9:12; ISSN 0884-2914
Country of Publication:
United States
Language:
English