Metal-organic chemical vapor deposition of InSb on GaAs and InSb in an inverted stagnation point flow geometry

Conference · Fri Jan 01 04:00:00 EST 1988

OSTI ID:6662655

Hebner, G A; Biefeld, R M; Killeen, K P

Several properties of InSb such as high mobility and narrow bandgap make it an attractive candidate for many unique devices. We have examined the metal-organic chemical vapor deposition (MOCVD) of InSb on GaAs and InSb substrates under a variety of conditions using trimethylindium and trimethylantimony sources. The absolute metal-organic partial pressures above the susceptor were monitored using in-situ uv absorption spectroscopy. X-ray studies of the homoepitaxial growth of InSb on InSb substrates (100) indicates good crystalline epitaxial growth while the x-ray peak for the InSb grown on GaAs (100) is broadened due to defects. Room-temperature Hall mobility measurements performed on the heteroepitaxial InSb layer on GaAs substrates indicates that the mobility of the InSb increases with increasing layer thickness. Mobilities range from 12,000 cm/sup 2//V sec for 0.8 microns to 38,000 cm/sup 2//V sec for 7.4 micron layers. The carrier concentrations are relatively constant (2 to 4 x 10/sup 16/ cm/sup -3/) for the n type InSb deposited layers. 4 refs., 9 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6662655
• Report Number(s): SAND-88-1711C; CONF-881155-13; ON: DE89003900
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARRIER MOBILITY
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DEPOSITION
DESIGN
ELECTROMAGNETIC RADIATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
ION MOBILITY
LONG WAVE RADIATION
MEASURING INSTRUMENTS
MOBILITY
PARTICLE MOBILITY
PNICTIDES
RADIATION DETECTORS
RADIATIONS
RADIOWAVE RADIATION
SURFACE COATING