Epitaxial growth of InSb on GaAs by metalorganic chemical vapor deposition

Journal Article · Mon Oct 08 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103354· OSTI ID:6411501

Hebner, G A ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (USA)

InSb epitaxial layers have been grown on GaAs substrates by metalorganic chemical vapor deposition using trimethylindium and triethyl- or trimethylantimony as sources of In and Sb. Transmission electron microscopy revealed the existence of a large number of misfit dislocations at the substrate-epitaxial layer interface and, in some samples, misoriented grains. The quality of the layers improved with thickness as indicated by transmission electron microscopy, x-ray rocking curve widths, and Hall mobilities. The mobility was correlated with surface roughness, x-ray rocking curve width, and the Sb/In ratio. Hall mobilities up to 60 900 and 27 000 cm{sup 2}/V s were obtained at 300 and 77 K, respectively, on a 2.9-{mu}m-thick epitaxial InSb layer grown using a two-step growth procedure.

• OSTI ID: 6411501
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:15; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ANTIMONY COMPOUNDS
CARRIER MOBILITY
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
DISLOCATIONS
ELECTRON MICROSCOPY
HALL EFFECT
INDIUM COMPOUNDS
LINE DEFECTS
MICROSCOPY
MOBILITY
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
SURFACE COATING
TRANSMISSION ELECTRON MICROSCOPY