Photolytic deposition of InSb films
Films of InSb were deposited on GaAs <100> substrates at room temperature by excimer laser photolysis at 193 or 248 nm of a mixture of trimethylindium (TMIn) and trimethylantimony (TMSb) in a hydrogen carrier medium. These films were compared to thermally grown MOCVD (metalorganic chemical vapor deposition) InSb films by optical microscopy and x-ray analysis and found to be stoichiometric polycrystalline, InSb. In-situ uv absorption spectroscopy has been used for the first time on an MOCVD system to monitor and control the partial pressures of the metalorganic reactants during deposition. This latter diagnostic was found to be critically important since parasitic reactions cause depletion of TMIn during transport from the source bubbler to the growth chamber. 6 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5420797
- Report Number(s):
- SAND-87-2846C; CONF-871124-91; ON: DE88006103
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
ALLOYS
ANTIMONY ALLOYS
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DECOMPOSITION
DEPOSITION
FILMS
INDIUM ALLOYS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOTOCHEMICAL REACTIONS
PHOTOLYSIS
PNICTIDES
SURFACE COATING