Continuous, high-power operation of a strained InGaAs/AlGaAs quantum well laser

Journal Article · Mon Dec 12 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100233· OSTI ID:6658911

Bour, D P; Gilbert, D B; Elbaum, L; Harvey, M G

Continuous wave (cw), high-power operation of a strained In/sub 0.2/Ga/sub 0.8/As/ AlGaAs quantum well laser, grown by atmospheric pressure organometallic vapor phase epitaxy, is reported. The laser active region consists of a single 70 A In/sub 0.2/Ga/sub 0.8/As/Al/sub 0.2/Ga/sub 0.8/As quantum well, with optical confinement provided by a graded index separate confinement heterostructure. The threshold current density and differential quantum efficiency of a 90 ..mu..m x 600 ..mu..m stripe with uncoated facets are approx.200 A/cm/sup 2/ and 46%, respectively. Lasing wavelength is approx.930 nm, and the cw single ended power versus current characteristic is linear up to 250 mW (1 A current). In the short-cavity (<300 ..mu..m) regime, these devices have high thresholds and have been observed to lase at shorter wavelength, presumably due to a saturation of gain at the lowest energy transition. The characteristic temperature is 150 K and decreases somewhat with cavity length. This suggests that some nonradiative process, most likely Auger recombination, contributes significantly to quantum well gain saturation.

• Research Organization: David Sarnoff Research Center, CN 5300, Princeton, New Jersey 08543-5300
• OSTI ID: 6658911
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:24; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
AUGER EFFECT
CURRENT DENSITY
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
EXPERIMENTAL DATA
FABRICATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
INFRARED RADIATION
JUNCTIONS
LASER CAVITIES
LASERS
LOW TEMPERATURE
NUMERICAL DATA
OPERATION
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PERFORMANCE
PNICTIDES
POWER
QUANTUM EFFICIENCY
RADIATIONS
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THIN FILMS
THRESHOLD CURRENT
VAPOR PHASE EPITAXY