High-power conversion efficiency in a strained InGaAs/AlGaAs quantum well laser

Journal Article · Mon May 01 04:00:00 EDT 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.342646· OSTI ID:6474495

Bour, D P; Evans, G A; Gilbert, D B

A strained quantum well laser with a front-end power conversion efficiency exceeding 33% under continuous-wave operation is demonstrated. The laser structure, grown by atmospheric pressure organometallic vapor-phase epitaxy, consists of a 70-A In/sub 0.2/Ga/sub 0.8/As quantum well active region with graded index separate confinement heterostructure. Lasing wavelength is 930 nm, and the front-end differential quantum efficiency is 58% for broad-area oxide stripe lasers with a high-reflection coating on the rear facet. Front-end, continuous power outputs greater than 1 W are available. Although these strained quantum well lasers have threshold currents as low as lattice-matched GaAs quantum well lasers, their internal quantum efficiencies appear to be reduced, thus limiting the maximum attainable conversion efficiency.

• Research Organization: David Sarnoff Research Center, CN 5300, Princeton, New Jersey 08543-5300
• OSTI ID: 6474495
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 65:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
430200* -- Particle Accelerators-- Beam Dynamics
Field Calculations
& Ion Optics
ALUMINIUM
ARSENIC COMPOUNDS
ARSENIDES
CONVERSION
EFFICIENCY
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY
ENERGY CONVERSION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED RADIATION
LASERS
MEDIUM PRESSURE
METALS
NEAR INFRARED RADIATION
OPERATION
PNICTIDES
POWER
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STRAINS
THRESHOLD ENERGY
VAPOR PHASE EPITAXY