Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers

Journal Article · Mon Oct 09 04:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.101590· OSTI ID:5477578

Bour, D P; Martinelli, R U; Gilbert, D B; Elbaum, L; Harvey, M G ^[1]

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1. David Sarnoff Research Center, CN 5300, Princeton, New Jersey 08543-5300 (US)

The performance of a series of In{sub {ital x}}Ga{sub 1{minus}{ital x}}As/AlGaAs ({ital x}=0.20 and 0.25) strained single quantum well (SSQW) lasers with lasing wavelengths in the range 930{le}{lambda}{le}1000 nm is discussed. Less-strained devices, with {ital x}=0.20 and QW thickness 7 nm ({lambda}{similar to}930 nm), perform comparably with GaAs QW lasers. Longer wavelength ({lambda}{gt}950 nm), more highly strained lasers exhibit poorer performance. Our results suggest that interfacial recombination limits the performance at the longer wavelength structures.

• OSTI ID: 5477578
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:15; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
AUGER EFFECT
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CURRENT DENSITY
CURRENTS
DATA
DEPOSITION
ELECTRIC CURRENTS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
OPERATION
PERFORMANCE
PNICTIDES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE COATING
THRESHOLD CURRENT
VAPOR DEPOSITED COATINGS