Organometallic vapor phase epitaxy of high-performance strained-layer InGaAs-AlGaAs diode lasers

Journal Article · Fri Mar 01 00:00:00 EST 1991 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/3.81377· OSTI ID:5705465

Wang, C A; Choi, H K ^[1]

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1. Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.

This paper reports on graded-index separate-confinement heterostructure single-quantum-well lasers incorporating a strained In{sub x}Ga{sub 1{minus}x}As active layer, with x {le} 0.25, and AlGaAs confining layers that have been grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy. The emission wavelength increases from 0.85 {mu}m for x = 0 to 1.03 {mu}m for x = 0.25. The growth of GaAs layers bounding the InGaAs active layer significantly improves laser performance. For devices with x = 0.25 and a cavity length L of 500 {mu}m, the pulsed threshold current density J{sub th} is reduced form 550 A/cm{sup 2} for structures with 10-nm-thick bounding layers, while the differential quantum efficiency {eta}{sub d} is increased from 46 to 80%. For x = 0.25 and L = 1500 {mu}m, J{sub th} = 65 A/cm{sup 2}. Output powers as high as 1.6 W per facet and power conversion efficiencies as high as 47% have been obtained for continuous operation of lasers with x = 0.25 having uncoated facets.

• OSTI ID: 5705465
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Vol. 27:3; ISSN 0018-9197
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
VAPOR PHASE EPITAXY
GALLIUM ARSENIDES
STRAINS
INDIUM ARSENIDES
SEMICONDUCTOR LASERS
PERFORMANCE
AUGMENTATION
EFFICIENCY
ENERGY CONVERSION
HETEROJUNCTIONS
LAYERS
NEAR INFRARED RADIATION
PULSES
QUANTUM MECHANICS
SEMICONDUCTOR DIODES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONVERSION
ELECTROMAGNETIC RADIATION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFRARED RADIATION
JUNCTIONS
LASERS
MECHANICS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)
360601 - Other Materials- Preparation & Manufacture
360606 - Other Materials- Physical Properties- (1992-)