Organometallic vapor phase epitaxy of high-performance strained-layer InGaAs-AlGaAs diode lasers

Journal Article · Fri Mar 01 04:00:00 EST 1991 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/3.81377· OSTI ID:5705465

Wang, C A; Choi, H K ^[1]

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1. Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.

This paper reports on graded-index separate-confinement heterostructure single-quantum-well lasers incorporating a strained In{sub x}Ga{sub 1{minus}x}As active layer, with x {le} 0.25, and AlGaAs confining layers that have been grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy. The emission wavelength increases from 0.85 {mu}m for x = 0 to 1.03 {mu}m for x = 0.25. The growth of GaAs layers bounding the InGaAs active layer significantly improves laser performance. For devices with x = 0.25 and a cavity length L of 500 {mu}m, the pulsed threshold current density J{sub th} is reduced form 550 A/cm{sup 2} for structures with 10-nm-thick bounding layers, while the differential quantum efficiency {eta}{sub d} is increased from 46 to 80%. For x = 0.25 and L = 1500 {mu}m, J{sub th} = 65 A/cm{sup 2}. Output powers as high as 1.6 W per facet and power conversion efficiencies as high as 47% have been obtained for continuous operation of lasers with x = 0.25 having uncoated facets.

• OSTI ID: 5705465
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) Vol. 27:3; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360606 -- Other Materials-- Physical Properties-- (1992-)
42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
AUGMENTATION
CONVERSION
EFFICIENCY
ELECTROMAGNETIC RADIATION
ENERGY CONVERSION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED RADIATION
JUNCTIONS
LASERS
LAYERS
MECHANICS
NEAR INFRARED RADIATION
PERFORMANCE
PNICTIDES
PULSES
QUANTUM MECHANICS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STRAINS
VAPOR PHASE EPITAXY