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InGaAs/AlGaAs strained single quantum-well diode lasers with extremely low-threshold current density and high efficiency

Technical Report ·
OSTI ID:5934033
;
Graded-index separate-confinement heterostructure InGaAs/AlGaAs single quantum well diode lasers emitting at 1.02 microns have been fabricated from structures grown by organometallic vapor phase epitaxy. Under pulsed operation, threshold current densities as low as 65 A/sq. cm, the lowest reported for InGaAs/AlGaAs lasers, have been obtained for a cavity length L of 1500 microns. Differential quantum efficiencies as high as 90% have been obtained for L = 300 microns. Output powers as high as 1.6 W per facet and power conversion efficiencies as high as 47% have been obtained for continuous operation of uncoated lasers with L = 1000 microns.
Research Organization:
Massachusetts Inst. of Tech., Lexington, MA (USA). Lincoln Lab.
OSTI ID:
5934033
Report Number(s):
AD-A-229317/3/XAB; JA--6543
Country of Publication:
United States
Language:
English

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InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency
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Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CONVERSION
CURRENT DENSITY
CURRENTS
DOCUMENT TYPES
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
FABRICATION
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GASES
HETEROJUNCTIONS
INDEXES
INDIUM COMPOUNDS
INFRARED RADIATION
JUNCTIONS
LASER CAVITIES
LASERS
NEAR INFRARED RADIATION
OPERATION
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PERFORMANCE
PNICTIDES
POWER
PULSES
QUANTUM EFFICIENCY
QUANTUM ELECTRONICS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT
VAPOR PHASE EPITAXY
VAPORS