Effect of confining layer aluminum composition on AlGaAs-GaAs-InGaAs strained-layer quantum well heterostructure lasers

Journal Article · Mon Aug 27 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103408· OSTI ID:6427098

York, P K; Langsjoen, S M; Miller, L M; Beernink, K J; Alwan, J J; Coleman, J J ^[1]

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1. Compound Semiconductor Microelectronics Laboratory, University of Illinois, Urbana, IL (USA) Materials Research Laboratory, University of Illinois, Urbana, IL (USA)

Data are presented on laser threshold current density and emission wavelength of strained-layer InGaAs-GaAs-Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As single quantum well lasers having confining layer aluminum compositions in the range 0.20{le}{ital x}{le}0.85. A decrease in threshold current density with increasing confining layer composition is related to the increased confinement factor of the waveguide structure. An increase in the laser emission wavelength is observed as a consequence of reduced bandfilling.

• OSTI ID: 6427098
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:9; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
CHEMICAL COATING
CHEMICAL COMPOSITION
CHEMICAL VAPOR DEPOSITION
CURRENTS
DEPOSITION
DESIGN
ELECTRIC CURRENTS
ENERGY LEVELS
FABRICATION
LASERS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE COATING
THRESHOLD CURRENT
WAVEGUIDES