Low degradation rate in strained InGaAs/AlGaAs single quantum well lasers

Journal Article · Thu Mar 01 04:00:00 EST 1990 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.50880· OSTI ID:7139574

Bour, D P; Gilbert, D B; Fabian, K B; Bednarz, J P; Ettenberg, M ^[1]

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1. David Sarnoff Research Center, Princeton, NJ (USA)

This paper reports a 10,000 h, 30{degrees}C constant-current lifetest performed on five strained In{sub 0.2}Ga{sub 0.8}As/AlGaAs single quantum well lasers, with {lambda} {approximately} 930 nm. The devices are 90 {mu}m {times} 400 {mu}m oxide-stripe lasers with facet coatings, grown by atmospheric pressure organometallic vapor phase epitaxy. For each diode, the current was maintained at a constant value of {approximately} 300 mA, corresponding to approximately 100 mW output power. After 10{sup 4} h, thresholds increased from an average of 84 mA, while quantum efficiencies were essentially unchanged. In relation to a typical 100 mW constant-power lifetest, this is equivalent to a degradation rate less than 1% per kh.

• OSTI ID: 7139574
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:3; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
657002 -- Theoretical & Mathematical Physics-- Classical & Quantum Mechanics
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASER MATERIALS
LASERS
MATERIALS
PERFORMANCE TESTING
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
TESTING
VAPOR PHASE EPITAXY