Magnetophotoluminescence of biaxially compressed InAsSb quantum wells
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Heterostructures with biaxially compressed InAsSb are being considered as active regions for midwave infrared diode lasers. Quantum wells of biaxially compressed InAs[sub 1[minus][ital x]]Sb[sub [ital x]] ([ital x][approx]0.09) in unstrained InAs were characterized using magnetophotoluminescence. The quantum size shift of the photoluminescence for a series of quantum wells produced an estimate of the conduction band offset. In magnetic field studies, the holes in the strained quantum wells exhibited a decrease in effective mass, approaching that of the electrons. A type I band offset was observed for these InAsSb/InAs heterostructures. Throughout this study, magnetoexcitonic behavior is observed; our analysis indicates that the exciton binding energy increases with quantum confinement.
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 6653705
- Journal Information:
- Applied Physics Letters; (United States), Vol. 66:3; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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