Midwave (4 [mu]m) infrared lasers and light-emitting diodes with biaxially compressed InAsSb active regions

Journal Article · Sun Feb 13 23:00:00 EST 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.111022· OSTI ID:5334866

Kurtz, S R; Biefeld, R M; Dawson, L R; Baucom, K C; Howard, A J ^[1]

---

1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

Heterostructures with biaxially compressed, As-rich InAsSb are being investigated as active regions for midwave infrared emitters. InAs[sub 1[minus][ital x]]Sb[sub [ital x]]/In[sub 1[minus][ital x]]Ga[sub [ital x]]As ([ital x][approx]0.1) strained-layer sublattices (SLSs), nominally lattice matched to InAs, were grown using metalorganic chemical vapor deposition. An SLS light-emitting diode was demonstrated which emitted at 3.6 [mu]m with 0.06% efficiency at 77 K. Optically pumped laser emission at 3.9 [mu]m was observed in a SLS/InPSb heterostructure. The laser had a maximum operating temperature of approximately 100 K.

• DOE Contract Number: AC04-94AL85000
• OSTI ID: 5334866
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 64:7; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COMPRESSION
DEPOSITION
DESIGN
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED SPECTRA
LASER MATERIALS
LASERS
LIGHT EMITTING DIODES
MATERIALS
OPTICAL PUMPING
PNICTIDES
PUMPING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTRA
STRAINS
SUPERLATTICES
SURFACE COATING