Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions
- Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)
The properties of InAsSb/InAsP strained-layer superlattice (SLS), midwave infrared materials, and devices are reported. SLSs were grown by metal-organic chemical vapor deposition and characterized by magnetophotoluminescence and x-ray diffraction. Excellent performance was observed for an SLS light emitting diode (LED) and an optically pumped SLS laser. The semimetal injected, broadband LED emitted at 4 {mu}m with 80 {mu}W of power at 300 K and 200 mA average current. The laser displayed 3.86 {mu}m emission at 240 K, the maximum operating temperature of the laser, and a characteristic temperature of 33 K. {copyright} {ital 1997 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 529980
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 70; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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