Heterostructures and infrared emitters with compressed InAsSb layers

Conference · Wed Mar 01 04:00:00 EST 1995

OSTI ID:32522

Kurtz, S R; Biefeld, R M

An overview is presented of strained InAsSb heterostructures and infrared emitters. InAsSb/InGaAs strained-layer superlattices (SLS) and InAsSb quantum wells were characterized using magneto-photoluminescence and compared with unstrained InAsSb and InAs alloys. In heterostructures with biaxially compressed InAsSb, large quantum confinement energies were observed, and the holes exhibited a decrease in effective mass, approaching that of the electrons. This study demonstrates that the electrons and holes in the InAsSb heterostructures are confined in the InAsSb layers, and the band offsets are type I. A large increase in the Auger-1 threshold energy should accompany the strain-induced change in valence-band symmetry of the InAsSb layers. Correspondingly, the InAsSb heterostructures display high radiative efficiencies and increased activation energies for nonradiative recombination compared with the unstrained alloys. LEDs and L-mrs with InAsSb heterostructure active regions are described. InAsSb/InGaAs SLS LEDs operating at 300K at wavelengths {le} 5 pm have been demonstrated. Optically pumped InAsSb/InGaAs SLS lasers, with InPSb cladding, had a maximum operating temperature of 100K.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 32522
• Report Number(s): SAND--94-2478C; CONF-950167--1; ON: DE95008157
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
ACTIVATION ENERGY
ANTIMONY ALLOYS
ARSENIC ALLOYS
AUGER ELECTRON SPECTROSCOPY
CHEMICAL VAPOR DEPOSITION
ELECTRONIC STRUCTURE
GALLIUM ALLOYS
HOLES
INDIUM ALLOYS
INFRARED RADIATION
LIGHT EMITTING DIODES
PHOTOLUMINESCENCE
QUANTUM ELECTRODYNAMICS
QUANTUM ELECTRONICS
SUPERLATTICES
THRESHOLD ENERGY