Growth and characterization of heterostructures and infrared emitters with compressed InAsSb layers
Technical Report
·
OSTI ID:50956
An overview is presented of work on strained InAsSb heterostructures and infrared emitters. InAsSb/InGaAs strained-layer superlattices (SLS) and InAsSb quantum wells were grown by metal-organic chemical vapor deposition and characterized using magneto-photoluminescence. LEDs and lasers with InAsSb heterostructure active regions are described.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 50956
- Report Number(s):
- SAND--95-0560; ON: DE95009828
- Country of Publication:
- United States
- Language:
- English
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