Photoluminescence determination of valence-band symmetry and Auger-1 threshold energy in biaxially compressed InAsSb layers
InAsSb/InGaAs strained-layer superlattices (SLSs) and InAsSb quantum wells, both with biaxially compressed InAsSb layers, were characterized using magneto-photoluminescence and compared with unstained InAsSb and InAs alloys. In heterostructures with biaxially compressed InAsSb, the holes exhibited a decrease in effective mass, approaching that of the electrons. Correcting the data for the magneto-exciton binding energy, we obtain electron-hole reduced mass values in the range, {mu}=0.010--0.015, for the InAsSb heterostructures, whereas {mu}=0.026 and {mu}-0.023 for unstrained InAsSb and InAs alloys respectively. In the 2-dimensional limit, a large increase in the Auger-1 threshold energy accompanies this strain-induced change in valence-band symmetry. Correspondingly, the activation energy for nonradiative recombination in the SLSs displayed a marked increase compared with that of the unstrained alloys.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10176280
- Report Number(s):
- SAND--94-0892C; CONF-940981--2; ON: DE94017408; BR: GB0103012
- Country of Publication:
- United States
- Language:
- English
Similar Records
Magnetophotoluminescence of biaxially compressed InAsSb quantum wells
Midwave (4 [mu]m) infrared lasers and light-emitting diodes with biaxially compressed InAsSb active regions