Photoluminescence determination of valence-band symmetry and Auger-1 threshold energy in biaxially compressed InAsSb layers

Conference · Mon Aug 01 04:00:00 EDT 1994

OSTI ID:10176280

Kurtz, S R; Biefeld, R M; Dawson, L R

InAsSb/InGaAs strained-layer superlattices (SLSs) and InAsSb quantum wells, both with biaxially compressed InAsSb layers, were characterized using magneto-photoluminescence and compared with unstained InAsSb and InAs alloys. In heterostructures with biaxially compressed InAsSb, the holes exhibited a decrease in effective mass, approaching that of the electrons. Correcting the data for the magneto-exciton binding energy, we obtain electron-hole reduced mass values in the range, {mu}=0.010--0.015, for the InAsSb heterostructures, whereas {mu}=0.026 and {mu}-0.023 for unstrained InAsSb and InAs alloys respectively. In the 2-dimensional limit, a large increase in the Auger-1 threshold energy accompanies this strain-induced change in valence-band symmetry. Correspondingly, the activation energy for nonradiative recombination in the SLSs displayed a marked increase compared with that of the unstrained alloys.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10176280
• Report Number(s): SAND--94-0892C; CONF-940981--2; ON: DE94017408; BR: GB0103012
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606
42 ENGINEERING
426000
AUGER EFFECT
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ANTIMONIDES
INDIUM ARSENIDES
PHYSICAL PROPERTIES
SUPERLATTICES