In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}P{sub y}/InP multiple quantum well solar cell structures

Journal Article · Sun Nov 01 04:00:00 EST 1998 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.368870· OSTI ID:663681

Raisky, O Y; Wang, W B; Alfano, R R ^[1]; Reynolds, Jr, C L; Stampone, D V; Focht, M W ^[2]

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1. New York State Center of Advanced Technology for Ultrafast Photonic Materials and Applications, Department of Physics, The City College of New York and The Graduate School of The City University of New York, New York, New York 10031 (United States)
2. Lucent Technologies, Bell Laboratories, 9999 Hamilton Boulevard, Breinigsville, Pennsylvania 18031 (United States)

In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}P{sub y}/InP-based multiple quantum well (MQW) solar cell structures with built-in sequential resonant tunneling were experimentally investigated. The MQW region extended the lower edge of the solar cell absorption compared to the control non-MQW InP sample. An average increase of 11{percent} in photovoltaic efficiency of the MQW sample over the control sample was observed. The measured open circuit voltage (V{sub oc}) was found to be in good agreement with the predicted value. The bias and excitation wavelength dependences of photoluminescence and photocurrent at room temperature were used to investigate carrier escape and recombination dynamics in the MQW and control samples. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 663681
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 84; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CURRENT DENSITY
EFFICIENCY
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
PHOTOLUMINESCENCE
PHOTOVOLTAIC EFFECT
RECOMBINATION
SOLAR CELLS
TUNNEL EFFECT