Carrier generation and transport in InGaAs/GaAs multiple quantum well solar cells
Book
·
OSTI ID:191145
- Hitachi Ltd., Hitachi, Ibaraki (Japan). Hitachi Research Lab.
Carrier generation and transport properties of GaAs p-i-n structure solar cells incorporating an In{sub x}Ga{sub 1{minus}x}As/GaAs multiple quantum well (MQW) are reported. In this type of solar cell, carrier recombination in the MQW should be suppressed to a level far below photogeneration, hence the authors studied the carrier transport by measuring the photocurrent of MQW solar cells with different potential depths, at various temperatures, under various applied voltages. Photocurrents for samples with 0 {le} x {le} 0.15 at room temperature showed that the ratio of the number of photogenerated carriers contributing to the photocurrent to the number of absorbed photons, expressed as quantum efficiency, was almost unity. The experimental results are well expressed with the theoretical efficiency of the carrier transport over the MQW in which recombination and escape of carriers are characterized by lifetimes depending on the potential depth of the well.
- OSTI ID:
- 191145
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Experimental analysis of GaAs-InGaAs MQW solar cells
Steady-state carrier escape from single quantum wells
Effect of number of stack on the thermal escape and non-radiative and radiative recombinations of photoexcited carriers in strain-balanced InGaAs/GaAsP multiple quantum-well-inserted solar cells
Book
·
Fri Dec 30 23:00:00 EST 1994
·
OSTI ID:191116
Steady-state carrier escape from single quantum wells
Journal Article
·
Tue Jun 01 00:00:00 EDT 1993
· IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:5615048
Effect of number of stack on the thermal escape and non-radiative and radiative recombinations of photoexcited carriers in strain-balanced InGaAs/GaAsP multiple quantum-well-inserted solar cells
Journal Article
·
Fri Feb 27 23:00:00 EST 2015
· Journal of Applied Physics
·
OSTI ID:22413168