Experimental analysis of GaAs-InGaAs MQW solar cells
- Eindhoven Univ. of Technology (Netherlands)
- ETSI de Telecomunicion, Madrid (Spain). Instituto de Energie Solar
Incorporation of Multiple Quantum Wells (MQW) in the i-region of p-i-n solar cells has been regarded as a promising alternative to design high efficiency III-V solar cells. Although recently it has been shown that the limiting efficiency of MQW solar cells cannot exceed the limiting efficiency of single bandgap solar cells, the potential of MQW solar cells to reach this limit, should be explored. In this sense, the authors present here an experimental analysis of the efficiency of GaAs-InGaAs p-i-n MQW solar cells, with fifteen 80 {angstrom} In{sub 0.2}Ga{sub 0.8}As quantum wells incorporated in the i-region of p-i-n GaAs cells. The authors show the effect of the GaAs barrier thickness on the dark current, I-V curve under illumination, spectral response and the radiative losses. Structural analysis have been performed by X-ray diffraction.
- OSTI ID:
- 191116
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
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