Study of defects, radiation damage and implanted gases in solids by field-ion and atom-probe microscopy
The ability of the field-ion microscope to image individual atoms has been applied, at Cornell University, to the study of fundamental properties of point defects in irradiated or quenched metals. The capability of the atom probe field-ion microscope to determine the chemistry - that is, the mass-to-charge ratio - of a single ion has been used to investigate the behavior of different implanted species in metals. A brief review is presented of: (1) the basic physical principles of the field-ion and atom-probe microscopes; (2) the many applications of these instruments to the study of defects and radiation damage in solids; and (3) the application of the atom-probe field-ion microscope to the study of the behavior of implanted /sup 3/He and /sup 4/He atoms in tungsten. The paper is heavily referenced so that the reader can pursue his specific research interests in detail.
- Research Organization:
- Cornell Univ., Ithaca, NY (USA). Dept. of Materials Science and Engineering; Cornell Univ., Ithaca, NY (USA). Materials Science Center
- DOE Contract Number:
- AS02-76ER03158
- OSTI ID:
- 6635741
- Report Number(s):
- DOE/ER/03518-94
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
Molecular & Chemical Physics-- Beams & their Reactions
656000 -- Condensed Matter Physics
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELEMENTS
EMISSION
FIELD EMISSION
HELIUM IONS
ION IMPLANTATION
ION MICROSCOPY
IONS
METALS
MICROSCOPY
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
REFRACTORY METALS
SURFACES
TRANSITION ELEMENTS
TUNGSTEN