Defects in metal crystals. Progress report, May 1, 1979-April 30, 1980
A broad investigation of the properties of crystal defects in metals and semiconductors was made. Attention during the past year has focused on fundamental properties of point defects (vacancies and self-interstitial atoms); aggregates of point defects (i.e., depleted zones); the range profiles of low-energy (< 1000 eV) implanted /sup 4/He and /sup 1/H in tungsten, the diffusive properties of /sup 4/He and /sup 1/H; the adsorption kinetics and sticking coefficient of hydrogen on tungsten; the imaging of silicon by field-ion microscopy; the chemical analysis of ordered Ni/sub 4/Mo and GaAs - on an atomic scale - via atom-probe field microscopy; and the low-temperature isochronal recovery behavior of ion-irradiated Ni/sub 4/Mo and Pt/sub 3/Co. Heavy use was made of the high-resolution field-ion microscope and the atom-probe field-ion microscope.
- Research Organization:
- Cornell Univ., Ithaca, NY (USA)
- DOE Contract Number:
- AC02-76ER03158
- OSTI ID:
- 5572722
- Report Number(s):
- COO-3158-87
- Country of Publication:
- United States
- Language:
- English
Similar Records
Study of defects, radiation damage and implanted gases in solids by field-ion and atom-probe microscopy
Study of defects and radiation damage in solids by field-ion and atom-probe microscopy
Related Subjects
360102 -- Metals & Alloys-- Structure & Phase Studies
360106* -- Metals & Alloys-- Radiation Effects
ADSORPTION
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
COBALT ALLOYS
CRYOGENIC FLUIDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFUSION
ELEMENTS
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HELIUM
HYDROGEN
INTERMETALLIC COMPOUNDS
INTERSTITIALS
ION IMPLANTATION
MATERIALS
METALS
MOLYBDENUM ALLOYS
NICKEL ALLOYS
NONMETALS
ORDER PARAMETERS
PHYSICAL RADIATION EFFECTS
PLATINUM ALLOYS
PLATINUM METAL ALLOYS
PNICTIDES
POINT DEFECTS
RADIATION EFFECTS
RARE GASES
REFRACTORY METALS
SEMICONDUCTOR MATERIALS
SORPTION
TRANSITION ELEMENTS
TUNGSTEN
VACANCIES