Characterization of thermal annealed Bi implanted silica

Conference · Wed Jan 01 04:00:00 EST 1992

OSTI ID:6624701

Morgan, S H; Henderson, D O; Pan, Z ^[1]; Magruder, III, R H ^[2]; Zuhr, R A ^[3]

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1. Fisk Univ., Nashville, TN (United States). Dept. of Physics
2. Belmont Univ., Nashville, TN (United States). Dept. of Physics
3. Oak Ridge National Lab., TN (United States)

Optical and infrared reflection spectra for Bi implanted silica are reported as a function of dose and thermal annealing. A series of high purity silica samples were implanted with Bi ions at an energy of 350 KeV. Doses were 1 [times] 10[sub 16] and 1.0 [times] 10[sup 17] ions/cm[sup 2] at 5[mu]amps/cm[sup 2]. The samples were subsequently thermally annealed at 400, 600 and 800C. The optical absorption from 6.2 to 1.8 eV and infrared reflectance from 5000 to 450 cm[sup [minus]1] were measured before and after annealing. Effects of thermal annealing are strongly dependent on Bi content.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: DOE; NASA; USDOE, Washington, DC (United States); National Aeronautics and Space Administration, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6624701
• Report Number(s): CONF-921101-105; ON: DE93009712; CNN: NAGW-2925
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
360606 -- Other Materials-- Physical Properties-- (1992-)
ABSORPTION SPECTRA
ANNEALING
BEAMS
BISMUTH IONS
CHALCOGENIDES
CHARGED PARTICLES
DOSES
ELASTIC SCATTERING
ELECTROMAGNETIC RADIATION
ENERGY RANGE
GLASS
HEAT TREATMENTS
INFRARED RADIATION
ION BEAMS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
OXIDES
OXYGEN COMPOUNDS
RADIATION DOSES
RADIATIONS
REFLECTION
RUTHERFORD SCATTERING
SCATTERING
SILICON COMPOUNDS
SILICON OXIDES
SPECTRA
WAVEGUIDES