Optical and infrared spectra of thermally annealed Pb implanted SiO{sub 2} glasses
- Fisk Univ., Nashville, TN (United States). Dept. of Physics
- Belmont Univ., Nashville, TN (United States). Dept. of Physics
- Vanderbilt Univ., Nashville, TN (United States). Dept. of Materials Science and Engineering
- Oak Ridge National Lab., TN (United States)
Infrared reflectance between 4000 and 100 cm{sup {minus}1} and optical spectra between 1.8 and 6.2 eV of high purity silica implanted with nominal doses of 1, 3 and 6 {times} 10{sup 16} Pb ions/cm{sup 2} were recorded before and after annealing at 400, 600, and 800C for 1 hour. Curve resolution analysis of the Si-O stretching region resulted in six peaks which were characterized by their lineshape parameters. The oscillator strength of the ion induced defect peak at 1035 cm{sup {minus}1} was found to depend on ion dose. The defect band at 1035 cm{sup {minus}1} decreased to an intensity comparable to that of the unimplanted glass after thermal annealing for 1 hour at 800C. Far infrared spectra indicated the formation of lead silicate particles after annealing.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Aeronautics and Space Administration, Washington, DC (United States); Federal Aviation Administration, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 10162274
- Report Number(s):
- CONF-920792--61; ON: DE93015304
- Country of Publication:
- United States
- Language:
- English
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