Characterization of thermal annealed Bi implanted silica
Conference
·
OSTI ID:10143221
- Fisk Univ., Nashville, TN (United States). Dept. of Physics
- Belmont Univ., Nashville, TN (United States). Dept. of Physics
- Oak Ridge National Lab., TN (United States)
Optical and infrared reflection spectra for Bi implanted silica are reported as a function of dose and thermal annealing. A series of high purity silica samples were implanted with Bi ions at an energy of 350 KeV. Doses were 1 {times} 10{sub 16} and 1.0 {times} 10{sup 17} ions/cm{sup 2} at 5{mu}amps/cm{sup 2}. The samples were subsequently thermally annealed at 400, 600 and 800C. The optical absorption from 6.2 to 1.8 eV and infrared reflectance from 5000 to 450 cm{sup {minus}1} were measured before and after annealing. Effects of thermal annealing are strongly dependent on Bi content.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Aeronautics and Space Administration, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 10143221
- Report Number(s):
- CONF-921101--105; ON: DE93009712; CNN: Grant: NAGW-2925
- Country of Publication:
- United States
- Language:
- English
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