Spatial mode structure of broad-area semiconductor quantum well lasers
The spatial mode characteristics of gain-guided broad-area quantum well lasers grown by organometallic chemical vapor deposition were investigated experimentally. GaAs/AlGaAs quantum well lasers grown on 6/sup 0/-off (100) oriented substrates exhibit excellent material uniformity, which allows study of their modal behavior. Gain-guided broad-area lasers fabricated on such uniform material demonstrate nearly ideal gain-guiding modal behavior. These lasers tend to lase in the fundamental mode near threshold and emit single-lobed far-field patterns. In these well-behaved broad-area lasers, we have identified the mechanism for degradation in the spatial coherence at high pumping levels as the onset of higher order lateral modes.
- Research Organization:
- Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
- OSTI ID:
- 6614636
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:3; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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