Broad-area tandem semiconductor laser

Journal Article · Mon Oct 17 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99968· OSTI ID:6777862

Chen, T R; Mehuys, D; Zhuang, Y H; Mittelstein, M; Wang, H; Derry, P L; Kajanto, M; Yariv, A

A tandem combination of a uniform gain broad-area semiconductor laser and a (lateral) periodic gain section displays a stable, near-diffraction-limited single-lobed far-field pattern. The GaAs/GaAlAs quantum well lasers display a high degree of coherence across 60-..mu..m-wide apertures provided that the broad-area section is sufficiently long.

• Research Organization: Department of Applied Physics, 128-95, California Institute of Technology, Pasadena, California 91125
• OSTI ID: 6777862
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:16; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
DATA
DESIGN
EXPERIMENTAL DATA
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY