Lateral coherence properties of broad-area semiconductor quantum-well lasers
Technical Report
·
OSTI ID:6806357
The lateral coherence of broad-area lasers fabricated form a GaAs/GaAlAs graded index waveguide separate confinement and single quantum-well heterostructure grown by molecular beam epitaxy was investigated. These lasers exhibit a high degree of coherence along the junction plane, thus producing a stable and very narrow far-field intensity distribution.
- Research Organization:
- California Inst. of Tech., Pasadena (USA)
- OSTI ID:
- 6806357
- Report Number(s):
- AD-A-175546/1/XAB
- Country of Publication:
- United States
- Language:
- English
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