Fundamental lateral mode oscillation via gain tailoring in broad area semiconductor lasers

Journal Article · Sun Sep 15 00:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96070· OSTI ID:5368680

Lindsey, C; Derry, P; Yariv, A

We show that by employing gain tailoring in a broad area semiconductor laser we achieve fundamental lateral mode operation with a diffraction-limited single-lobed far-field pattern. We demonstrate a tailored gain broad area laser 60 ..mu..m wide which emits 450 mW per mirror into a stable, single-lobed far-field pattern 3 1/2/sup 0/ wide at 5.3 I/sub th/.

• Research Organization: Applied Physics Department, California Institute of Technology, Pasadena, California 91125
• OSTI ID: 5368680
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:6; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
DATA
EXPERIMENTAL DATA
GAIN
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
OSCILLATION MODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THEORETICAL DATA