Linear tailored gain broad area semiconductor lasers

Journal Article · Mon Jun 01 00:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073435· OSTI ID:6362005

Lindsey, C P; Mehuys, D; Yariv, A

Tailored gain semiconductor lasers capable of high-power operation with single-lobed, nearly diffraction limited beamwidths only a few degrees wide have been demonstrated in proton implanted chirped arrays and ''halftone'' broad area lasers. The authors analyze lasers with a linear gain gradient, and obtain analytic approximations for their unsaturated optical eigenmodes. Unlike a uniform array, the fundamental mode of a linear tailored gain laser is the mode at threshold. Mode discrimination may be controlled by lasing the spatial gain gradient. All modes of asymmetric tailored gain waveguides have single-lobed far-field patterns offset from 0/sup 0/. Finally, they utilize tailored gain broad area lasers to make a measurement of the antiguiding parameter, and find b = 2.5 +- 0.5, in agreement with previous results.

• Research Organization: Dept. of Applied Physics, California Institute of Technology, Pasadena, CA 91125
• OSTI ID: 6362005
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ASYMMETRY
BARYONS
BEAM DYNAMICS
COHERENT SCATTERING
CURRENTS
DESIGN
DIFFRACTION
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
FERMIONS
GAIN
HADRONS
LASER RADIATION
LASERS
NUCLEONS
OPERATION
PROTONS
RADIATIONS
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
WAVEGUIDES