Single contact tailored gain phased array of semiconductor lasers

Journal Article · Mon Oct 01 00:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95374· OSTI ID:6763166

Lindsey, C P; Kapon, E; Katz, J; Margalit, S; Yariv, A

We demonstrate a single contact tailored gain-guided array in which the gain profile across the array is made strongly asymmetric by varying the width of the contact stripes. A proton isolated array of six (GaAl)As lasers with 5-..mu..m separations and widths varying linearly between 3 and 8 ..mu..m had a single lobed far field 2/sup 0/ wide, close to the diffraction limit for a single supermode. Fabrication of this device is simple, and suited to large-scale processing techniques. We also show that in such an asymmetric gain-guided array the fundamental mode is favored over higher order modes, and that higher order modes can have single lobed far-field patterns differing only slightly from that of the fundamental.

• Research Organization: Applied Physics Department, California Institute of Technology, Pasadena, California 91125
• OSTI ID: 6763166
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LINE WIDTHS
OPTICAL MODES
OSCILLATION MODES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS