Inverted-V chirped phased arrays of gain-guided GaAs/GaAlAs diode lasers

Journal Article · Sat Dec 15 04:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95117· OSTI ID:5992684

Kapon, E; Lindsey, C P; Smith, J S; Margalit, S; Yariv, A

Inverted-V chirped arrays of multiple quantum well GaAs/GaAlAs lasers were grown by molecular beam epitaxy. These arrays consisted of seven gain-guided lasers whose stripe widths decreased, from the central laser to the outermost ones, symmetrically. This structure makes it possible to discriminate against the higher order array supermodes, which results in diffraction limited beams with a single lobe directed perpendicular to the laser facet. Single lobed far-field patterns, 3/sup 0/--4/sup 0/ wide, were obtained from inverted-V chirped arrays operated up to 1.5I/sub th/. The supermode structure of these arrays was identified by studying their spectrally resolved near fields.

• Research Organization: California Institute of Technology, Pasadena, California 91125
• OSTI ID: 5992684
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
EPITAXY
FABRICATION
FREQUENCY MODULATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
METALS
MODULATION
MOLECULAR BEAM EPITAXY
OPERATION
OSCILLATION MODES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS