Phased arrays of buried-ridge InP/InGaAsP diode lasers

Journal Article · Tue Jan 15 04:00:00 EST 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95921· OSTI ID:6254007

Kapon, E; Lu, L T; Rav-Noy, Z; Yi, M; Margalit, S; Yariv, A

Phase-locked arrays of buried-ridge InP/InGaAsP lasers, emitting at 1.3 ..mu..m, were grown by liquid phase epitaxy. The arrays consist of index-guided, buried-ridge lasers which are coupled via their evanescent optical fields. This index-guided structure makes it possible to avoid the occurrence of lower gain in the interchannel regions. As a result, the buried-ridge arrays oscillate mainly in the fundamental supermode, which yields single lobed, narrow far-field patterns. Single lobed beams less than 4/sup 0/ in width were obtained from buried-ridge InP/InGaAsP phased arrays up to more than twice the threshold current.

• Research Organization: California Institute of Technology, Pasadena, California 91125
• OSTI ID: 6254007
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
COUPLING
CURRENTS
ELECTRIC CURRENTS
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFRARED SPECTRA
LASERS
LAYERS
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRA
THRESHOLD CURRENT
WAVEGUIDES