InGaAsP ridge waveguide laser array with nonuniform spacing

Journal Article · Mon Feb 03 04:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96590· OSTI ID:6176332

Dutta, N K; Koszi, L A; Segner, B P; Napholtz, S G

The fabrication and performance characteristics of InGaAsP (lambdaapprox.1.3 ..mu..m) ridge waveguide laser arrays are described. The ridges have variable spacing but are chosen to be of equal widths so that the propagation constants, which determine the emission wavelengths, of the individual emitters are equal. The lasers have threshold currents in the range 300--350 mA at 30 /sup 0/C and have been operated to pulsed output powers of 600 mW/facet. The far field along the junction plane is single lobed with a width characteristic of a phase locked, diffraction limited beam. Measurements of cw emission spectrum also show emission in a single fundamental supermode.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6176332
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CURRENTS
DATA
DIFFRACTION
ELECTRIC CURRENTS
EMISSION SPECTRA
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
POWER RANGE MILLI W
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRA
THRESHOLD CURRENT