InP/InGaAsP buried mesa ridge laser: A new ridge laser with reduced leakage currents
Journal Article
·
· Appl. Phys. Lett.; (United States)
We describe a new kind of InP/InGaAsP buried ridge laser: the buried mesa ridge laser. A simple calculation shows that this laser structure has considerably reduced leakage currents compared with the conventional buried ridge laser. The fabrication steps are described. The light-current characteristic curve measured on the InP/InGaAsP buried mesa ridge laser shows a linear behavior up to 40 mW, the highest value reported so far for the buried ridge type laser.
- Research Organization:
- AEG Aktiengesellschaft, Forschungsinstitut Ulm, Sedanstrasse 10, D-7900 Ulm, West Germany
- OSTI ID:
- 6179400
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:22; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
LEAKAGE CURRENT
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
LEAKAGE CURRENT
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS