Analysis of current leakage in InGaAsP/InP buried heterostructure lasers

Journal Article · Thu Jun 01 00:00:00 EDT 1989 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.29270· OSTI ID:5774362

Ohtoshi, T; Yamaguchi, K

The mechanism of current leakage at high temperatures in InGaAsP/InP buried heterostructure (BH) lasers with p-n-n current blocking structures is analyzed using two-dimensional computer simulation. It is found that no junction in the blocking layers is reverse-biased and that current confinement is due to electrically floating regions in the blocking structures. To minimize the leakage current in these BH lasers, it is necessary to decrease the device width and the connection length between the blocking and cladding layers and to increase the doping level and thickness of the blocking layers.

• Research Organization: Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.
• OSTI ID: 5774362
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 25:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
COMPUTERIZED SIMULATION
CURRENTS
DATA ANALYSIS
DIMENSIONS
ELECTRIC CURRENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
HIGH TEMPERATURE
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
LEAKAGE CURRENT
MINIMIZATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SIMULATION
SOLID STATE LASERS
THICKNESS
TWO-DIMENSIONAL CALCULATIONS