InP electroluminescence as a tool to directly monitor carrier leakage in InGaAsP/InP buried heterostructure lasers

Journal Article · Mon Dec 14 23:00:00 EST 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339002· OSTI ID:5971967

Stern, M B; Brody, E; Sowell, B

Direct measurements of homojunction and heterojunction carrier leakage currents in InGaAsP/InP buried heterostructure lasers have been made by monitoring the electroluminescence (EL) at 0.96 ..mu..m in the InP confinement layers. These EL measurements show directly, for the first time, a correlation between homojunction leakage currents and the sublinearity in the 1.3-..mu..m light output-current characteristic. The observed decrease in the 0.96-..mu..m intensity with increasing p-dopant concentration is a direct confirmation that heterojunction leakage is reduced when the doping level in the p-InP confinement layer is increased.

• Research Organization: GTE Laboratories Incorporated, Waltham, Massachusetts 02254
• OSTI ID: 5971967
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 62:12; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
CRYSTAL DOPING
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROLUMINESCENCE
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASERS
LEAKAGE CURRENT
LUMINESCENCE
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS