Spatial mode structure of index-guided broad-area quantum-well lasers

Journal Article · Mon Oct 01 04:00:00 EDT 1990 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/3.60894· OSTI ID:5937278

Chang-Hasnain, C J; Kapon, E; Colas, E ^[1]

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1. Bellcore, Red Bank, NJ (US)

The spatial mode characteristics of index-guided ridge-waveguide broad-area (BA) quantum-well lasers grown by organometallic chemical vapor deposition were investigated experimentally. The index-guided BA lasers lase in a high-order lateral mode, and thus emit a double-lobed far-field pattern. This is significantly different from their gain-guided counterparts, which lase in the fundamental mode. For BA lasers with the same width and made on the same or similar material, the index-guided lasers have lower threshold currents, higher quantum efficiencies, and better linearity in the light versus current characteristics. The authors observed that the order of the dominant high-order lateral-mode increased with increasing laser width or effective index step of the laser waveguide. In addition, they find that the mechanism for degradation in the spatial coherence at high pumping levels is the onset of higher order lateral modes.

• OSTI ID: 5937278
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA) Vol. 26:10; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
EFFICIENCY
ENERGY
HETEROJUNCTIONS
JUNCTIONS
LASERS
OSCILLATION MODES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE COATING
THRESHOLD ENERGY
WAVEGUIDES