Analysis of diode lasers with lateral spatial variations in thickness

Journal Article · Tue Jul 15 00:00:00 EDT 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91795· OSTI ID:5347249

Streifer, W; Burnham, R D; Scifres, D R

Diode lasers with active and/or cladding regions whose thicknesses vary spatially parallel to the p-n junction are analyzed. It is shown that lateral real-refractive-index waveguiding occurs and that a diffusion gradient exists which propels the injected charges into the lasing modal volume. Lateral mode patterns and thresholds are calculated and sensitivity to higher-order lateral mode oscillation is evaluated for various stripe widths and spreading resistances. Results are shown to agree well with experimental data.

• Research Organization: Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
• OSTI ID: 5347249
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 37:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
COMPARATIVE EVALUATIONS
DATA
DIMENSIONS
DISTRIBUTION
EXPERIMENTAL DATA
INFORMATION
JUNCTIONS
LASERS
MATHEMATICAL MODELS
NUMERICAL DATA
OPTICAL PROPERTIES
OSCILLATION MODES
P-N JUNCTIONS
PHYSICAL PROPERTIES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SENSITIVITY
SPATIAL DISTRIBUTION
THICKNESS
VARIATIONS
WAVEGUIDES