Study of lateral modes in wide double-heterostructure GaAs-GaAlAs laser diodes

Journal Article · Wed Mar 01 04:00:00 EST 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325042· OSTI ID:5015718

Lengyel, G; Wolf, H D; Zschauer, K H

Higher-order lateral modes produced in wide GaAs-GaAlAs DH lasers were spectrally analyzed and photographed by the use of spatially resolved spectroscopy. These modes behave differently in mesa- and stripe-geometry lasers. They were studied in detail as a function of pumping current for the mesa structure. The spacing between lateral modes could be approximated by a simple model based on a sandwich-type symmetrical dielectric waveguide. Stripe-geometry lasers follow Hermitian-Gaussian mode patterns which are produced by parabolic refractive-index profiles. An anomalous development of mode intensities near threshold was observed in the mesa diode. Immediately above threshold, higher orders dominated the near-field patterns. Explanation for this could be found in the lateral optical gain profile produced by the interaction of the nonlinear characteristics of the p-n junction and the geometrical series spreading resistance of the substrate.

• Research Organization: Department of Electrical Engineering, University of Rhode Island, Kingston, Rhode Island 02881
• OSTI ID: 5015718
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:3; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTROLUMINESCENCE
EMISSION SPECTRA
ENERGY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
JUNCTIONS
LASERS
LUMINESCENCE
OPTICAL MODES
OSCILLATION MODES
P-N JUNCTIONS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SPECTRA
THRESHOLD ENERGY
WAVEGUIDES