Double-heterostructure GaAs-GaAlAs injection lasers on semi-insulating substrates using carrier crowding

Journal Article · Mon Aug 15 00:00:00 EDT 1977 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89662· OSTI ID:7110507

Lee, C P; Margalit, S; Yariv, A

GaAs-GaAlAs double-heterostructure lasers were fabricated on semi-insulating substrates. Laser action based on carrier confinement via the crowding effect has been demonstrated. Laser action takes place in a narrow (10--20 ..mu..m) region near the edge of the mesa where the current is injected. The threshold current is low and is comparable to that of stripe-geometry lasers.

• Research Organization: California Institute of Technology, Pasadena, California 91125
• OSTI ID: 7110507
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 31:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EMISSION SPECTRA
ENERGY
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
LASERS
LAYERS
OPERATION
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SPECTRA
THRESHOLD ENERGY