Striped-substrate double-heterostructure lasers

Journal Article · Tue Jul 01 00:00:00 EDT 1975 · IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 418-420

DOI:https://doi.org/10.1109/JQE.1975.1068674· OSTI ID:4152522

Burnham, R D; Scifres, D R; Tramontant, J C; Alimonda, A S

A different type of stripe-geometry laser is demonstrated in which current confinement is achieved by selective diffusion of the n-type substrate prior to growth of the GaAs/GaAlAs heterostructure layers. This structure exhibits low room-temperature threshold currents resulting from the small lateral- current spreading from the edges of the stripe. Lowest order transverse-mode operation is achieved for stripe widths of 10 $mu$m. (auth)

• Research Organization: Xerox Palo Alto Research Center, CA
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-007205
• OSTI ID: 4152522
• Journal Information: IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 418-420, Journal Name: IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 418-420; ISSN IEJQA
• Country of Publication: United States
• Language: English

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