Repetitive pulsating stripe geometry GaAlAs double-heterostructure lasers with a stripe by a shallow Zn diffusion

Journal Article · Wed Jul 01 00:00:00 EDT 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92545· OSTI ID:6236667

Hanamitsu, K; Fujiwara, T; Takusagawa, M

We have fabricated a repetitively pulsating stripe geometry GaAlAs double-heterostructure laser with a stripe by a shallow Zn-diffusion into n-GaAs top layer, generating high-power fundamental transverse-mode optical pulse trains. Spatially inhomogeneous current injection for exciting pulsations is achieved by a nonuniform breakover in space-charge region under the Zn-diffused stripe. These generated optical pulses have a peak power of more than 10 mW, a width of 0.4 ns, and a repetition frequency of 200 MHz--1 GHz.

• Research Organization: Fujitsu Laboratories Ltd., 1015 Kamikodanaka, Nakahara ku, Kawasaki, 211, Japan
• OSTI ID: 6236667
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 39:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DIFFUSION
DISTRIBUTION
ELECTRIC CURRENTS
ELEMENTS
ENERGY-LEVEL TRANSITIONS
EXCITATION
FABRICATION
FREQUENCY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GEOMETRY
GHZ RANGE
LASERS
LAYERS
MATERIALS
MATHEMATICS
METALS
MHZ RANGE
N-TYPE CONDUCTORS
OSCILLATION MODES
PNICTIDES
PULSATIONS
PULSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SPACE CHARGE
SPATIAL DISTRIBUTION
ZINC