Self-aligned GaAs/GaAIAs semiconductor laser with lateral spatial variation in thickness grown by metalorganic-chemical vapor deposition

Journal Article · Tue Apr 14 23:00:00 EST 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92450· OSTI ID:6774760

Fekete, D; Burnham, R D; Scifres, D R; Streifer, W; Yingling, R D

A self-aligned masking technique for growing diode lasers with lateral spatial variations in the active and/or cladding regions by metalorganic-chemical vapor deposition is described. These lasers inherently have both lateral current confinement and lateral real refractive index waveguidance. Threshold currents of 40 mA and differential quantum efficiencies of 30% are measured reproducibly over a wafer.

• Research Organization: Xerox Palo Alto Research Centers, Palo Alto, California 94304
• OSTI ID: 6774760
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALIGNMENT
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CLADDING
DEPOSITION
DIMENSIONS
DISTRIBUTION
EFFICIENCY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM EFFICIENCY
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SPATIAL DISTRIBUTION
SURFACE COATING
THICKNESS
VARIATIONS
WAVEGUIDES