GaAs/GaAlAs quantum well laser with a lateral spatial variation in thickness grown by metalorganic chemical vapor deposition

Journal Article · Sun Mar 15 23:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98104· OSTI ID:7099530

Fekete, D; Bour, D; Ballantyne, J M; Eastman, L F

A self-aligned GaAs/GaAlAs tapered laser with a tapered quantum well active region is described. The laser is grown by low pressure metalorganic chemical vapor deposition in a horizontal reactor. The effect of the tapered quantum well is in concentrating the injected charges in the modal volume and thus 6.2 mA threshold current is obtained. At a high power level the laser operates in single longitudinal and transversal modes.

• Research Organization: School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, New York 14853
• OSTI ID: 7099530
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DATA
DEPOSITION
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PERFORMANCE
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD CURRENT